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W29F102 64K x 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29F102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
*
Single 5-volt operations: - 5-volt Read - 5-volt Erase - 5-volt Program
*
Low power consumption - Active current: 25 mA (typ.) - Standby current: 20 A (typ.)
* *
*
Fast Program operation: - Word-by-Word programming: 50 S (max.) Fast Erase operation: 100 mS (typ.) Fast Read access time: 45/50/55/70 nS Endurance: 1K/10K cycles (typ.) Ten-year data retention Hardware data protection 8K word Boot Block with Lockout protection
* * * *
Automatic program and erase timing with internal VPP generation End of program or erase detection - Toggle bit - Data polling Latched address and data TTL compatible I/O JEDEC standard word-wide pinouts Available packages: 40-pin TSOP and 44-pin PLCC
* * * * * *
-1-
Publication Release Date: June 1999 Revision A4
W29F102
PIN CONFIGURATIONS BLOCK DIAGRAM
VDD
A9 A10 A11 A12 A13 A14 A15 NC WE VDD NC CE DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33
40-pin TSOP
32 31 30 29 28 27 26 25 24 23 22 21
GND A8 A7 A6 A5 A4 A3 A2 A1 A0 OE DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 GND
V SS CE OE WE
CONTROL OUTPUT BUFFER
DQ0
. .
DQ15
A0
. .
A15
MAIN MEMORY DECODER (56K Words) BootBlock (8K Words)
V/ DDD/ Q Q Q C N N D WN 13 14 15 E C C D E C
6 5 4 3 2 1
AA 11 54
44 43 42 41 40 39 38 37 36
DQ12 DQ11 DQ10 DQ9 DQ8 GND NC DQ7 DQ6 DQ5 DQ4
7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
A13 A12 A11 A10 A9 GND NC A8 A7 A6 A5
PIN DESCRIPTION
SYMBOL A0-A15 DQ0-DQ15 CE OE WE VDD GND NC PIN NAME Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Power Supply Ground No Connection
44-pin PLCC
35 34 33 32 31 30 29
DDDD QQQQ 3210
/ NAA OC01 E
AAA 234
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W29F102
FUNCTIONAL DESCRIPTION
Read Mode
The read operation of the W29F102 is controlled by CE and OE, both of which have to be low for the host to obtain data from the outputs. CE is used for device selection. When CE is high, the chip is de-selected and only standby power will be consumed. OE is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE or OE is high. Refer to the timing waveforms for further details.
Boot Block Operation
There is one 8K-word boot block in this device, which can be used to store boot code. It is located in the first 8K words of the memory with the address range from 0000 hex to 1FFF hex. See Command Codes for Boot Block Lockout Enable for the specific code. Once this feature is set the data for the designated block cannot be erased or programmed (programming lockout); other memory locations can be changed by the regular programming method. Once the boot block programming lockout feature is activated, the chip erase function will only affect the main memory. In order to detect whether the boot block feature is set on the 8K-words block, users can perform software command sequence: enter the product identification mode (see Command Codes for Identification/Boot Block Lockout Detection for specific code), and then read from address "0002 hex". If the output data is "FF hex," the boot block programming lockout feature is activated; if the output data is "FE hex," the lockout feature is inactivated and the block can be erased/programmed. To return to normal operation, perform a three-byte command sequence (or an alternate single-word command) to exit the identification mode. For the specific code, see Command Codes for Identification/Boot Block Lockout Detection.
Chip Erase Operation
The chip-erase mode can be initiated by a six-word command sequence. After the command loading cycle, the device enters the internal chip erase mode, which is automatically timed and will be completed in a fast 100 mS (typical). The host system is not required to provide any control or timing during this operation. If the boot block programming lockout is activated, only the data in the main memory will be erased to FF(hex), and the data in the boot block will not be erased (remains same as before the chip erase operation). The entire memory array (main memory and boot block) will be erased to FF hex. by the chip erase operation if the boot block programming lockout feature is not activated. The device will automatically return to normal read mode after the erase operation completed. Data polling and/or Toggle Bits can be used to detect end of erase cycle.
Main Memory Erase Operation
The main memory erase mode can be initiated by a six-word command sequence. After the command loading cycle, the device enters the internal main-memory erase mode, which is automatically timed and will be completed in a fast 100 mS (typical). The host system is not required to provide any control or timing during this operation. The device will automatically return to normal read mode after the erase operation completed. Data polling and/or Toggle Bits can be used to detect end of erase cycle.
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Publication Release Date: June 1999 Revision A4
W29F102
Program Operation
The W29F102 is programmed on a word-by-word basis. Program operation can only change logical data "1" to logical data "0" The erase operation (changed entire data in main memory and/or boot block from "0" to "1" is needed before programming. The program operation is initiated by a 4-word command cycle (see Command Codes for Word Programming). The device will interally enter the program operation immediately after the wordprogram command is entered. The internal program timer will automatically time-out (50 S max. TBP) once completed and return to normal read mode. Data polling and/or Toggle Bits can be used to detect end of program cycle.
Hardware Data Protection
The integrity of the data stored in the W29F102 is also hardware protected in the following ways: (1) Noise/Glitch Protection: A WE pulse of less than 15 nS in duration will not initiate a write cycle. (2) VDD Power Up/Down Detection: The programming operation is inhibited when VDD is less than 2.5V typical. (3) Write Inhibit Mode: Forcing OE low, CE high, or WE high will inhibit the write operation. This prevents inadvertent writes during power-up or power-down periods. (4) VDD power-on delay: When VDD has reached its sense level, the device will automatically time-out 5 mS before any write (erase/program) operation.
Data Polling (DQ7 & DQ15)- Write Status Detection
The W29F102 includes a data polling feature to indicate the end of a program or erase cycle. When the W29F102 is in the internal program or erase cycle, any attempt to read DQ7 or DQ15 of the last word loaded will receive the complement of the true data. Once the program or erase cycle is completed, DQ7 or DQ15 will show the true data. Note that DQ7 or DQ15 will show logical "0" during the erase cycle, and become logical "1" or true data when the erase cycle has been completed.
Toggle Bit (DQ6 & DQ14)- Write Status Detection
In addition to data polling, the W29F102 provides another method for determining the end of a program cycle. During the internal program or erase cycle, any consecutive attempts to read DQ6 or DQ14 will produce alternating 0's and 1's. When the program or erase cycle is completed, this toggling between 0's and 1's will stop. The device is then ready for the next operation.
Product Identification
The product ID operation outputs the manufacturer code and device code. Programming equipment automatically matches the device with its proper erase and programming algorithms. The manufacturer and device codes can be accessed by software or hardware operation. In the software access mode, a six-word (or JEDEC 3-word) command sequence can be used to access the product ID. A read from address 0000H outputs the manufacturer code (00DAh). A read from address 0001H outputs the device code (002Fh). The product ID operation can be terminated by a three-word command sequence or an altenate one-word command sequence (see Command Definition table). In the hardware access mode, access to the product ID is activated by forcing CE and OE low, WE high, and raising A9 to 12 volts.
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W29F102
TABLE OF OPERATING MODES
Operating Mode Selection
(VHH = 12V 0.5V)
MODE CE Read Write Standby Write Inhibit Output Disable Product ID VIL VIL VIH X X X VIL VIL OE VIL VIH X VIL X VIH VIL VIL WE VIH VIL X X VIH X VIH VIH AIN AIN X X X X
PINS ADDRESS Dout Din High Z High Z/DOUT High Z/DOUT High Z Manufacturer Code 00DA (Hex) Device Code 002F (Hex) DQ.
A0 = VIL; A1-A15 = VIL; A9 = VHH A0 = VIH; A1-A15 = VIL; A9 = VHH
TABLE OF COMMAND DEFINITION
Command Description No. of Cycles 1st Cycle 2nd Cycle 3rd Cycle Addr. Data AIN DOUT 2AAA 55 2AAA 55 2AAA 55 2AAA 55 2AAA 55 2AAA 55 5555 80 5555 80 5555 A0 5555 80 5555 90 5555 F0 5555 AA 5555 AA AIN DIN 2AAA 55 5555 40 2AAA 55 2AAA 55 5555 10 5555 30 Addr. Data Addr. Data 4th Cycle Addr. Data 5th Cycle Addr. Data 6th Cycle Addr. Data
Read Chip Erase Main Memory Erase Word Program Boot Block Lockout Product ID Entry Product ID Exit Product ID Exit
(1) (1)
1 6 6 4 6 3 3 1
5555 AA 5555 AA 5555 AA 5555 AA 5555 AA 5555 AA XXXX F0
5555 AA
Note: Address Format: A14-A0 (Hex); Data Format: DQ15-DQ8 (Don't Care); DQ7-DQ0 (Hex) Either one of the two Product ID Exit commands can be used.
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Publication Release Date: June 1999 Revision A4
W29F102
Command Codes for Word Program
WORD SEQUENCE 0 Write 1 Write 2 Write 3 Write ADDRESS 5555H 2AAAH 5555H Programmed-Address DATA AAH 55H A0H Programmed-Data
Word Program Flow Chart
Word Program Command Flow
Load data AA to address 5555 Load data 55 to address 2AAA Load data A0 to address 5555 Load data Din to programmedaddress
Pause 50 S
Exit
Notes for software program code: Data Format: DQ15-DQ0 (Hex); XX = Don't Care Address Format: A14-A0 (Hex)
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W29F102
Command Codes for Chip Erase
BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H DATA AAH 55H 80H AAH 55H 10H
Chip Erase Acquisition Flow
Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 10 to address 5555
Pause 1 Sec.
Exit
Notes for chip erase: Data Format: DQ15-DQ8: Don't Care ; DQ7-DQ0 (Hex) Address Format: A14-A0 (Hex)
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Publication Release Date: June 1999 Revision A4
W29F102
Command Codes for Main Memory Erase
BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H DATA AAH 55H 80H AAH 55H 30H
Main Memory Erase Acquisition Flow
Load data AA to address 5555 Load data 55 to address 2AAA Load data 80 to address 5555 Load data AA to address 5555 Load data 55 to address 2AAA Load data 30 to address 5555
Pause 1 Sec.
Exit
Notes for chip erase: Data Format: DQ15-DQ8: Don't Care ; DQ7-DQ0 (Hex) Address Format: A14-A0 (Hex)
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W29F102
Command Codes for Product Identification and Boot Block Lockout Detection
BYTE SEQUENCE PRODUCTIDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY ADDRESS 1 Write 2 Write 3 Write 5555 2AAA 5555 Pause 10 S DATA AA 55 90 SOFTWARE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION EXIT (6) ADDRESS 5555H 2AAAH 5555H Pause 10 S DATA AAH 55H F0H
Software Product Identification and Boot Block Lockout Detection Acquisition Flow
Product Identification Entry (1)
Load data AA to address 5555
Product Identification and Boot Block Lockout Detection Mode (3)
Product Identification Exit(6)
Load data AA to address 5555 (2)
Load data 55 to address 2AAA
Read address = 0000 data = DA
Load data 55 to address 2AAA
Load data 90 to address 5555
Read address = 0001 data = 2F
(2)
Load data F0 to address 5555
Pause 10 S
(4)
Read address = 0002 data = FF/FE
Pause 10 S
(5) Normal Mode
Notes for software product identification/boot block lockout detection: (1) Data Format: DQ15-DQ8 (Don't Care), DQ7-DQ0 (Hex); Address Format: A14-A0 (Hex) (2) A1-A15 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH. (3) The device does not remain in identification and boot block lockout detection mode if power down. (4) If the output data is "FF Hex," the boot block programming lockout feature is activated; if the output data "FE Hex," the lockout feature is inactivated and the block can be programmed. (5) The device returns to standard operation mode. (6) Optional 1-write cycle (write F0 hex at XXXX address) can be used to exit the product identification/boot block lockout detection.
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Publication Release Date: June 1999 Revision A4
W29F102
Command Codes for Boot Block Lockout Enable
BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write BOOT BLOCK LOCKOUT FEATURE SET ADDRESS 5555H 2AAAH 5555H 5555H 2AAAH 5555H Pause 1 Sec. DATA AAH 55H 80H AAH 55H 40H
Boot Block Lockout Enable Acquisition Flow
Boot Block Lockout Feature Set Flow
Load data AA to address 5555
Load data 55 to address 2AAA
Load data 80 to address 5555
Load data AA to address 5555
Load data 55 to address 2AAA
Load data 40 to address 5555
Pause 1 Sec.
Exit
Notes for boot block lockout enable: Data Format: DQ15-DQ8 Don't Care), DQ7-DQ0 (Hex) Address Format: A14-A0 (Hex)
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W29F102
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER Power Supply Voltage to Vss Potential Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (<20 nS ) on Any Pin to Ground Potential Voltage on OE Pin to Ground Potential RATING -0.5 to +7.0 0 to +70 -65 to +150 -0.5 to VDD +1.0 -1.0 to VDD +1.0 -0.5 to 12.5 UNIT V C C V V V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.
DC Operating Characteristics
(VDD = 5.0V 10%, VSS = 0V, TA = 0 to 70 C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS MIN. TYP. MAX. 50 70 3
UNIT
Power Supply Current
ICC
CE = OE = VIL, WE = VIH, all 50, 55, I/Os open Address inputs = 70 nS VIL/VIH, at f = 5 MHz 45 nS CE = VIH, all I/Os open Other inputs = VIL/VIH
-
25 25 2
mA mA mA
Standby VDD Current (TTL input) Standby VDD Current (CMOS input) Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
ISB1
ISB2
CE = VDD -0.3V, all I/Os open Other inputs = VDD -0.3V/GND
-
20
100
A
ILI ILO VIL VIH VOL VOH
VIN = GND to VDD VOUT = GND to VDD IOL = 2.1 mA IOH = -0.4 mA 50, 55, 70 nS 45 nS
-0.3 -0.3 2.0 2.4
-
10 10 0.8 0.6 VDD +0.5 0.45 -
A A V V V V V
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Publication Release Date: June 1999 Revision A4
W29F102
Power-up Timing
PARAMETER Power-up to Read Operation Power-up to Write Operation SYMBOL TPU. READ TPU. WRITE TYPICAL 100 5 UNIT S mS
CAPACITANCE
(VDD = 5.0V, TA = 25 C, f = 1 MHz)
PARAMETER I/O Pin Capacitance Input Capacitance
SYMBOL CI/O CIN
CONDITIONS VI/O = 0V VIN = 0V
MAX. 12 6
UNIT pf pf
AC CHARACTERISTICS
AC Test Conditions
PARAMETER Input Pulse Levels Input Rise/Fall Time Input/Output Timing Level Output Load 0V to 3.0V < 5 nS 1.5V/1.5V 1 TTL Gate and CL = 30 pF CONDITIONS
AC Test Load and Waveform
+5V
1.8K
DOUT
30 pF (Including Jig and Scope) 1.3K
Input
3V 1.5V 0V Test Point
Output
1.5V
Test Point
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W29F102
AC Characteristics, continued
Read Cycle Timing Parameters
(VDD = 5.0V 10%, TA = 0 to 70 C)
PARAMETER
SYM.
W29F10245 MIN. MAX.
W29F10250 MIN. MAX.
W29F10255 MIN. MAX.
W29F10270 MIN. MAX.
UNIT
Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time
CE Low to Active Output OE Low to Active Output CE High to High-Z Output OE High to High-Z Output
TRC TCE TAA TOE TCLZ TOLZ TCHZ TOHZ TOH
45 0 0 0
45 45 25 20 20 -
50 0 0 0
50 50 25 20 20 -
55 0 0 0
55 55 30 25 25 -
70 0 0
70 70 35 25
nS nS nS nS nS nS nS nS nS
0
25 -
Output Hold from Address Change
Write Cycle Timing Parameters
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Address Setup Time
Address Hold Time
WE and CE Setup Time WE and CE Hold Time
TAS TAH TCS TCH TOES TOEH TCP TWP TWPH TDS TDH TBP TEC
0 50 0 0 0 0 70 70 70 50 0 -
10 0.1
50 1
nS nS nS nS nS nS nS nS nS nS nS S Sec.
OE High Setup Time OE High Hold Time CE Pulse Width
WE Pulse Width WE High Width
Data Setup Time Data Hold Time Word Programming Time Erase Cycle Time
Note: All AC timing signals observe the following guidelines for determining setup and hold times: (a) High level signal's reference level is VIH and (b) low level signal's reference level is VIL.
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Publication Release Date: June 1999 Revision A4
W29F102
AC Characteristics, continued
Data Polling and Toggle Bit Timing Parameters
PARAMETER SYM. W29F10245 MIN. MAX. W29F10250 MIN. MAX. W29F10255 MIN. MAX. W29F10270 MIN. MAX.
UNIT
OE to Data Polling Output Delay CE to Data Polling Output Delay OE to Toggle Bit Output Delay CE to Toggle Bit Output Delay
TOEP TCEP TOET TCET
-
25 45 25 45
-
25 50 25 50
-
30 55 30 55
-
35 70 35 70
nS nS nS nS
TIMING WAVEFORMS
Read Cycle Timing Diagram
TRC Address A15-0 TCE CE
OE
TOE
VIH WE
TOLZ
T OHZ
TCLZ High-Z DQ15-0
TOH Data Valid TAA
TCHZ High-Z Data Valid
- 14 -
W29F102
Timing Waveforms, continued
WE Controlled Command Write Cycle Timing Diagram
TAS Address A15-0
TAH
CE
TCS T OES
TCH T OEH
OE TWP T WPH
WE
TDS DQ15-0 Data Valid
TDH
CE Controlled Command Write Cycle Timing Diagram
TAS
TAH
Address A15-0 TCPH TCP CE TOES OE TOEH
WE TDS DQ15-0 High Z Data Valid
TDH
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Publication Release Date: June 1999 Revision A4
W29F102
Timing Waveforms, continued
Program Cycle Timing Diagram
Word Program Cycle Address A15-0 5555 2AAA 5555 Address
DQ15-0
AA
55
A0
Data-In
CE
OE TWP WE Word 0
T WPH
TBP
Word 1
Word 2
Word 3
Internal Write Start
DATA Polling Timing Diagram
Address A15-0 WE TCEP CE TOEH OE TOEP DQ7/DQ15 X X TBP or TEC X X TOES
- 16 -
W29F102
Timing Waveforms, continued
Toggle Bit Timing Diagram
Address A15-0
WE
CE TOEH OE TOES
DQ6/DQ14 TBP orTEC
Boot Block Lockout Enable Timing Diagram
Six-word code for Boot Block Lockout Feature Enable Address A15-0 5555 2AAA 5555 5555 2AAA 5555
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX40
CE
OE WE
TWP TWPH SW0 SW1 SW23 SW3 SW4 SW5
TWC
- 17 -
Publication Release Date: June 1999 Revision A4
W29F102
Timing Waveforms, continued
Chip Erase Timing Diagram
Six-word code for 5V-only software chip erase Address A15-0 5555 2AAA 5555 5555 2AAA 5555
DQ15-0
XXAA
XX55
XX80
XXAA
XX55
XX10
CE
OE WE
TWP TWPH SW0 SW1 SW2 SW3 SW4 SW5
TEC
Internal Erase starts
Main Memory Erase Timing Diagram
Six-word code for 5V-only software Main Memory Erase Address A15-0 5555 2AAA 5555 5555 2AAA 5555
DQ15-0 CE
XXAA
XX55
XX80
XXAA
XX55
XX30
OE WE
TWP TWPH SW0 SW1 SW2 SW3 SW4 SW5
TEC
Internal Erase starts
- 18 -
W29F102
ORDERING INFORMATION
PART NO. ACCESS TIME (nS) POWER SUPPLY CURRENT MAX. (mA) W29F102Q-45 W29F102Q-50 W29F102Q-55 W29F102Q-70 W29F102P-45 W29F102P-50 W29F102P-55 W29F102P-70 W29F102Q-45B W29F102Q-50B W29F102Q-55B W29F102Q-70B W29F102P-45B W29F102P-50B W29F102P-55B W29F102P-70B
Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure.
STANDBY VDD CURRENT MAX. (A) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS) 100 (CMOS)
PACKAGE
CYCLE
45 50 55 70 45 50 55 70 45 50 55 70 45 50 55 70
70 50 50 50 70 50 50 50 70 50 50 50 70 50 50 50
40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 44-pin PLCC 44-pin PLCC 44-pin PLCC 44-pin PLCC 40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 40-pin TSOP (10 mm x 14 mm) 44-pin PLCC 44-pin PLCC 44-pin PLCC 44-pin PLCC
1K 1K 1K 1K 1K 1K 1K 1K 10K 10K 10K 10K 10K 10K 10K 10K
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Publication Release Date: June 1999 Revision A4
W29F102
PACKAGE DIMENSIONS
44-pin PLCC
HD D
6 1 44 40
Dimension in Inches
Dimension in mm
Symbol
7 39
Min. Nom. Max. Min. Nom. Max.
0.185 0.020 0.145 0.150 0.155 0.026 0.028 0.032 0.016 0.018 0.022 0.008 0.010 0.014 0.51 3.68 0.66 0.41 0.20 3.81 0.71 0.46 0.25 3.94 0.81 0.56 0.36 4.70
E HE
GE
17
29
18
28
c
A A1 A2 b1 b c D E e GD GE HD HE L y
Notes:
0.648 0.653 0.658 16.46 16.59 16.71 0.648 0.653 0.658 16.46 16.59 16.71 1.27 BSC 0.050 BSC 0.590 0.610 0.630 14.99 15.49 16.00 0.590 0.610 0.630 14.99 15.49 16.00 0.680 0.690 0.700 17.27 17.53 17.78 0.680 0.690 0.700 17.27 17.53 17.78 0.090 0.100 0.110 0.004 2.29 2.54 2.79 0.10
L A2 A
Seating Plane
e
GD
b b1
A1 y
1. Dimension D & E do not include interlead flash. 2. Dimension b1 does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches 4. General appearance spec. should be based on final visual inspection spec.
40-pin TSOP (10 mm x 14 mm)
HD
Dimension in Inches Dimension in mm
D
Symbol
Min.
Nom.
Max.
0.047
Min.
Nom.
Max.
1.20
c
e1
M
A A1 A2 b c D E HD e L L1 Y
0.002 0.037 0.007 0.004 0.484 0.390 0.543 0.039 0.009 0.006
0.006 0.041 0.011 0.008
0.05 0.95 0.17 0.10 1.00 0.22 0.15
0.15 1.05 0.27 0.20 12.50 10.10 14.20
E
0.10(0.004)
b
0.488 0.492 0.394 0.398
12.30 12.40 9.90 10 14.00 0.50
0.551 0.559 13.80 0.020
0.020
0.024 0.031
0.028
0.50
0.60 0.8
0.70
A L L1 A2 A1
0.000 0 3
0.004 5
0.00 0 3
0.10 5
Y
Controlling dimension: Millimeters
- 20 -
W29F102
VERSION HISTORY
VERSION A1 A2 DATE Feb. 1998 Apr. 1998 1, 13, 14, 19 6, 7, 8, 9, 10 6, 7, 8, 9 18 A3 A4 Mar. 1999 Jun. 1999 1, 13, 14, 19 11, 19 5 11, 13 PAGE Initial Issued Add 35 nS item and delete 50 nS item Change address format from A15 to A14 Add the pause time Correct the address from 2000 to 5555 Add 50/70 nS bining Delete 35 nS bining Change Icc 50 mA to 70 mA (only for 45 nS) Change VIL 0.8V to 0.6V (only for 45 nS) VHH = 12V 0.5V VDD = 5.0V 10% DESCRIPTION
Headquarters
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II, No. 4, Creation Rd. III, 123 Hoi Bun Rd., Kwun Tong, Science-Based Industrial Park, Kowloon, Hong Kong Hsinchu, Taiwan TEL: 852-27513100 TEL: 886-3-5770066 FAX: 852-27552064 FAX: 886-3-5796096 http://www.winbond.com.tw/ Voice & Fax-on-demand: 886-2-27197006
Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Systems Lab.
2727 N. First Street, San Jose, CA 95134, U.S.A. TEL: 408-9436666 FAX: 408-5441798
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd., Taipei, Taiwan TEL: 886-2-27190505 FAX: 886-2-27197502
Note: All data and specifications are subject to change without notice.
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Publication Release Date: June 1999 Revision A4

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